研究のタイプ: 医学/生物学の研究 (experimental study)

[ヒトの安静時脳電図のアルファ波に対するGSMを模擬したELF放射の影響] med./bio.

The effect of GSM-like ELF radiation on the alpha band of the human resting EEG

掲載誌: 2008 30th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, Vancouver, BC, Canada. IEEE, 2008: 5680-5683; ISBN 978-1-4244-1814-5

この研究は、GSMネットワークで運用される携帯電話機が放出するDC-40kHzの超低周波(ELF)電磁界がヒトの安静時脳電図に与える影響を調べた。著者らはこの問題をより広いプロトコルで研究中であり、今回の報告はその一部である。72名の健常な被験者で、完全にカウンタバランスさせた二重ブラインドの交差デザインで実験した。その結果、ELFばく露を与えた脳半球側でのみ、20分のばく露時間中にアルファ波帯の低下が観察された、と報告している。

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研究目的(著者による)

To study the influence of extremely low frequency electromagnetic fields (emitted by GSM-DTX mobile phones) on human resting EEG.

詳細情報

72 healthy volunteers (35 females) were examined under: 1) sham exposure, 2) continuous radiofrequency exposure, 3) pulsed radiofrequency exposure and 4) pure extremely low frequency electromagnetic exposure. Partcipants attended a two hour recording session which included four 30 minutes intervals (four minutes break in between) where the order of exposure was counter balanced. In each 30 minutes interval, the first five minutes served as baseline, followed by 20 minutes exposure and five minutes post exposure period.

影響評価項目

ばく露

ばく露 パラメータ
ばく露1:
ばく露時間: continuous for 20 min
continuous RF
-
ばく露2:
ばく露時間: continuous for 20 min
pulsed RF
-
ばく露3: 2–217 Hz
ばく露時間: continuous for 20 min

General information

participants were exposed in 4 times 20 min sessions with a 10 min break between exposures; exposures were in random order: i) continuous RF ii) pulsed RF iii) ELF iv) sham

ばく露1

主たる特性
周波数
タイプ
  • electromagnetic field
波形
  • unspecified
ばく露時間 continuous for 20 min
Additional information continuous RF
ばく露装置
ばく露の発生源/構造
  • specially constructed mobile phone handset
ばく露装置の詳細 exposure device placed inside a Nokia 3110 mobile phone housing which was held in standard phoning position by a specially designed cradle
Sham exposure A sham exposure was conducted.
パラメータ

No parameters are specified for this exposure.

ばく露2

主たる特性
周波数
タイプ
  • electromagnetic field
波形
  • pulsed
ばく露時間 continuous for 20 min
Additional information pulsed RF
ばく露装置
ばく露の発生源/構造
  • E1と同じ装置
Sham exposure A sham exposure was conducted.
パラメータ

No parameters are specified for this exposure.

ばく露3

主たる特性
周波数 2–217 Hz
タイプ
  • magnetic field
ばく露時間 continuous for 20 min
Additional information simulation of the DTX frame structure
ばく露装置
ばく露の発生源/構造
  • E1と同じ装置
  • additional wire loop of 9 mm radius inside the exposure device
Sham exposure A sham exposure was conducted.
パラメータ
測定量 種別 Method Mass 備考
磁束密度 25 µT - - - -

ばく露を受けた生物:

方法 影響評価項目/測定パラメータ/方法

研究対象とした生物試料:
研究対象とした臓器系:
調査の時期:
  • ばく露前
  • ばく露中
  • ばく露後

研究の主なアウトカム(著者による)

A decrease in the alpha wave frequency band was observed during the 20 minutes of the extremely low frequency electromagnetic field exposure in the exposed hemisphere only.
The results suggest that extremely low frequency electromagnetic fields as emitted from GSM-DTX mobile phones may have an effect on the resting alpha wave frequency band of the human EEG.

研究の種別:

研究助成

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