この研究は、紫外線B波（UV-B）にばく露した後の細胞の生存率、およびUV-B誘導のDNA損傷に対し、超低周波磁界（ELF MF）が修飾作用をもつか否かを調べた。試験した細胞は、いずれもヒト由来の形質転換細胞WI38VA13/2RAおよびXP2OS(SV) 細胞である。ELF MFばく露にはヘルムホルツコイルを用い、5mT、60 Hzの正弦波磁界のばく露を与えた。2種類の細胞それぞれに、UV-B（20-80 J/m2）照射に続いてELF MFの24時間ばく露（または擬似ばく露）を行った。生存率は、ELF MFばく露後に48時間培養してWSTアッセイにより調べた。DNA損傷は、ELF MFばく露終了後、ELISA法で定量化した。その結果、生存率は、ELF MFのばく露群と擬似ばく露群で有意差がなかった；UV-B誘導のDNA損傷も同様に両群で有意差がなかった、と報告している。
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To determine whether exposure of skin derived cells to an extremely low frequency magnetic field alters the cell viability and the DNA damage induced by ultraviolet B.
Xeroderma pigmentosum is a rare hereditary disease of the skin characterized by a low ability to repair DNA damage induced by ultraviolet radiation. The XP2OS(SV)-cell line was established from xeroderma pigmentosum skin. The W138VA13-cell line was used as a control group.
First, the cells were radiated with ultraviolet B of different intensities (0, 20, 40, 60 or 80 J/m²). Afterwards, the cells were exposed to an extremely low frequency field or sham exposed for 1, 3, or 24 hours.
|ばく露時間||continuous for 1, 3 or 24 hours|
|ばく露装置の詳細||exposure system consisted of CO2 incubator with a built-in magnetic field, constructed with Helmholtz coils (inner diameter 250 mm, length 160 mm, 128 turns), a slide regulator and a thermo controller; temperature in incubtaor: 37 ± 0.2°C; interior and exterieur were shielded by silicon steel and Permalloy C, respectively; direction of magnetic field was vertical|
|Sham exposure||A sham exposure was conducted.|
In both cell lines, ultraviolet radiation reduced the cell viability and induced DNA damage. However, no significant influence of magnetic field exposure on the cell viability and DNA damage was observed.
The data indicate that the exposure to extremely low frequency magnetic fields had no influence on the cell viability and the DNA damage induced by ultraviolet B.