研究のタイプ: 医学/生物学の研究 (experimental study)

[GTEMセル内の1966MHz電磁界へのジャーカットT細胞の反応のイン・ビトロ評価] med./bio.

In-vitro assessment of Jurkat T-cells response to 1966 MHz electromagnetic fields in a GTEM cell.

掲載誌: IEEE 37th Annual International Conference of the Engineering in Medicine and Biology Society (EMBC), 2015. IEEE, 2015: 2592-2595, ISBN 9781424492701

この論文は、GTEMセル内での変調および非変調の1966MHz電磁界へのばく露に対する、ジャーカットT細胞の反応についての実験の構成および手順、ならびにイン・ビトロ評価について述べている。異なる組合せの電界強度ばく露時間および変調方式を適用した。その結果、低レベル(3V/m)の連続波信号へのばく露有意なDNA損傷を生じなかったが、極端なストレスレベル(76.4V/m)では僅かな増加が認められた。他方、低および高電界強度のUMTS信号はどちらも、イン・ビトロでのDNA損傷と統計的に関連付けられた。

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研究目的(著者による)

The genotoxic effect of exposure of Jurkat cells to 1966 MHz electromagnetic fields should be investigated.

詳細情報

Several fields with different field strengths, exposure durations and either a continuous wave signal or UMTS modulation were investigated. For each field, a total of 20 exposed and 4 sham-exposed cell culture tubes was examined. Further 4 exposed tubes per field were used for temperature measurement. Additionally, an unknown number of tubes were used as the control group.

影響評価項目

ばく露

ばく露 パラメータ
ばく露1: 1,966 MHz
Modulation type: CW
ばく露時間: continuous for 10 minutes
ばく露2: 1,966 MHz
Modulation type: CW
ばく露時間: continuous for 120 minutes
ばく露3: 1,966 MHz
Modulation type: CW
ばく露時間: continuous for 10 minutes
ばく露4: 1,966 MHz
Modulation type: CW
ばく露時間: continuous for 120 minutes
ばく露5: 1,966 MHz
ばく露時間: continuous for 10 minutes
ばく露6: 1,966 MHz
ばく露時間: continuous for 120 minutes
ばく露7: 1,966 MHz
ばく露時間: continuous for 10 minutes
ばく露8: 1,966 MHz
ばく露時間: continuous for 120 minutes

ばく露1

主たる特性
周波数 1,966 MHz
タイプ
  • electromagnetic field
ばく露時間 continuous for 10 minutes
Modulation
Modulation type CW
ばく露装置
ばく露の発生源/構造
  • GTEMセル
チャンバの詳細 dielectric tubes in a rack
ばく露装置の詳細 the GTEM cell had outer dimensions of 3.95 m x 2.02 m x 1.95 m
Sham exposure A sham exposure was conducted.
パラメータ
測定量 種別 Method Mass 備考
電界強度 10 V/m - 校正 - -
電力 0.691 W - 測定値 - generator input power

ばく露2

主たる特性
周波数 1,966 MHz
タイプ
  • electromagnetic field
ばく露時間 continuous for 120 minutes
Modulation
Modulation type CW
ばく露装置
ばく露の発生源/構造
  • E1と同じ装置
Sham exposure A sham exposure was conducted.
パラメータ
測定量 種別 Method Mass 備考
電界強度 3 V/m - 校正 - -
電力 0.066 W - 測定値 - generator input power

ばく露3

主たる特性
周波数 1,966 MHz
タイプ
  • electromagnetic field
ばく露時間 continuous for 10 minutes
Modulation
Modulation type CW
ばく露装置
ばく露の発生源/構造
  • E1と同じ装置
Sham exposure A sham exposure was conducted.
パラメータ
測定量 種別 Method Mass 備考
電界強度 76.4 V/m - 校正 - -
電力 43.651 W - 測定値 - generator input power

ばく露4

主たる特性
周波数 1,966 MHz
タイプ
  • electromagnetic field
ばく露時間 continuous for 120 minutes
Modulation
Modulation type CW
ばく露装置
ばく露の発生源/構造
  • E1と同じ装置
Sham exposure A sham exposure was conducted.
パラメータ
測定量 種別 Method Mass 備考
電界強度 76.4 V/m - 校正 - -
電力 43.651 W - 測定値 - generator input power

ばく露5

主たる特性
周波数 1,966 MHz
タイプ
  • electromagnetic field
ばく露時間 continuous for 10 minutes
Additional information UMTS
Modulation
Modulation type cf. additional information
Additional information

3G/UMTS

ばく露装置
ばく露の発生源/構造
  • E1と同じ装置
Sham exposure A sham exposure was conducted.
パラメータ
測定量 種別 Method Mass 備考
電界強度 10 V/m - 校正 - -
電力 2.041 W - 測定値 - generator input power

ばく露6

主たる特性
周波数 1,966 MHz
タイプ
  • electromagnetic field
ばく露時間 continuous for 120 minutes
Additional information UMTS
Modulation
Modulation type cf. additional information
Additional information

3G/UMTS

ばく露装置
ばく露の発生源/構造
  • E1と同じ装置
Sham exposure A sham exposure was conducted.
パラメータ
測定量 種別 Method Mass 備考
電界強度 3 V/m - 校正 - -
電力 0.169 W - 測定値 - generator input power

ばく露7

主たる特性
周波数 1,966 MHz
タイプ
  • electromagnetic field
ばく露時間 continuous for 10 minutes
Additional information UMTS
Modulation
Modulation type cf. additional information
Additional information

3G/UMTS

ばく露装置
ばく露の発生源/構造
  • E1と同じ装置
Sham exposure A sham exposure was conducted.
パラメータ
測定量 種別 Method Mass 備考
電界強度 76.4 V/m - 校正 - -
電力 95.499 W - 測定値 - generator input power

ばく露8

主たる特性
周波数 1,966 MHz
タイプ
  • electromagnetic field
ばく露時間 continuous for 120 minutes
Additional information UMTS
Modulation
Modulation type cf. additional information
Additional information

3G/UMTS

ばく露装置
ばく露の発生源/構造
  • E1と同じ装置
Sham exposure A sham exposure was conducted.
パラメータ
測定量 種別 Method Mass 備考
電界強度 76.4 V/m - 校正 - -
電力 95.499 W - 測定値 - generator input power

ばく露を受けた生物:

方法 影響評価項目/測定パラメータ/方法

研究対象とした生物試料:
調査の時期:
  • ばく露前
  • ばく露後

研究の主なアウトカム(著者による)

DNA damage was significantly increased in sham exposed cells of all groups compared to the control group. For continuous wave exposure, only high intensity fields (groups 3 and 4) showed a slight but significantly increased level of DNA damage compared to sham exposed cells. However, UMTS exposure resulted in signficantly increased DNA damage in all exposure groups (groups 5-8) compared to sham exposed cells.
The temperature increase during exposure was 0.1°C in the groups with the lowest field strength (groups 2 and 6) and most distinct in groups with the highest field strength and longest exposure duration (groups 4 and 8 with 1.2°C and 1.3°C, respectively). As there were only small differences observed between corresponding groups of continuous wave and UMTS exposure, it was assumed that the temperature increase was associated to electric field intensity more than to modulation scheme.
Exposure to the electromagnetic fields had no effect on cell viability.
The authors conclude that exposure to a UMTS 1966 MHz electromagnetic field might be related to DNA damage in Jurkat cells.

研究の種別:

研究助成

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